SUM70040E-GE3
MOSFET N-CH 100V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM70040E-GE3 TrenchFET® N-Channel Power MOSFET. This device features a 100V drain-to-source breakdown voltage and a continuous drain current rating of 120A (Tc) at 25°C. With a low on-resistance of 4mOhm at 20A and 10V Vgs, it offers exceptional conduction efficiency. The MOSFET is packaged in a TO-263 (D2PAK) surface-mount configuration, supporting high power dissipation of 375W (Tc). Key electrical parameters include a gate charge of 120nC (max) at 10V and input capacitance of 5100pF (max) at 50V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding applications in power supply, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 50 V |
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