SUM60N02-3M9P-E3
MOSFET N-CH 20V 60A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUM60N02-3M9P-E3 is a TrenchFET® series N-channel power MOSFET designed for robust performance. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.9mOhm at 20A and 10V, it offers low conduction losses. The device supports a gate-source drive voltage range from 4.5V to 10V, with a maximum gate charge (Qg) of 50nC at 4.5V and input capacitance (Ciss) of 5950pF at 10V. It is housed in a TO-263-3, D2PAK surface-mount package, rated for an operating temperature range of -55°C to 175°C. Maximum power dissipation is 3.75W (Ta) and 120W (Tc). This MOSFET is commonly utilized in automotive, industrial, and power supply applications requiring high efficiency and power handling.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 10 V |