SUM60061EL-GE3
P-CHANNEL 80 V (D-S) MOSFET D2PAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM60061EL-GE3 is a P-Channel TrenchFET® Power MOSFET designed for high-power applications. This device features an 80V Drain-to-Source Voltage (Vdss) and offers a continuous drain current capability of 150A (Tc) with a maximum power dissipation of 375W (Tc). The ultra-low on-resistance of 6.1mOhm at 20A and 10V Vgs ensures efficient switching and minimal conduction losses.
Optimized for demanding environments, it operates across a temperature range of -55°C to 175°C. The SUM60061EL-GE3 utilizes a TO-263 (D2PAK) surface mount package, facilitating integration into compact designs. Key electrical characteristics include a gate charge of 218 nC (Max) at 10V and input capacitance of 9600 pF (Max) at 40V. This MOSFET is suitable for applications in power supplies, motor control, and power switching circuits within industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 40 V |
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