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SUM60030E-GE3

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SUM60030E-GE3

MOSFET N-CH 80V 120A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUM60030E-GE3 is an N-channel power MOSFET from the TrenchFET® series, featuring an 80V drain-source breakdown voltage and a continuous drain current rating of 120A at 25°C case temperature. This device offers a low on-resistance of 3.2mOhm maximum at 30A and 10V Vgs, facilitating efficient power delivery. With a maximum power dissipation of 375W at 25°C case, it is suitable for high-power applications. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, ideal for automated assembly. Key electrical characteristics include an input capacitance (Ciss) of 7910pF at 40V and a gate charge (Qg) of 141nC at 10V. This component is designed for demanding power conversion and management applications across industries such as automotive, industrial, and telecommunications. The operating temperature range is -55°C to 175°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7910 pF @ 40 V

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