SUM50P10-42-E3
MOSFET N-CH 100V 36A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM50P10-42-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 36A at 25°C (Tc). The extremely low on-resistance (Rds On) of 4.2 mOhm is achieved at 14A and 10V Vgs. The MOSFET is packaged in a TO-263 (D2PAK) surface-mount package, suitable for high-density applications. Key parameters include a maximum gate charge (Qg) of 160 nC at 10V Vgs and input capacitance (Ciss) of 4600 pF at 50V Vds. Power dissipation is rated at 125W (Tc) and 18.8W (Ta). This component is commonly utilized in power supply, industrial automation, and automotive applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 18.8W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 50 V |
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