SUM50N06-16L-E3
MOSFET N-CH 60V 50A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUM50N06-16L-E3 is an N-Channel Power MOSFET designed for demanding applications. This component features a low Rds(on) of 16mOhm at 20A and 10V Vgs, facilitating efficient power transfer. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) rating of 50A at 25°C (Tc), it handles significant power loads. The maximum power dissipation is 93W at 25°C (Tc) and 3.7W at 25°C (Ta). Key parameters include a gate charge (Qg) of 40 nC (max) at 10V Vgs and an input capacitance (Ciss) of 1325 pF (max) at 25V Vds. The device is housed in a surface-mount TO-263-3, D2PAK package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and power management systems requiring robust performance. It is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 93W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325 pF @ 25 V |
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