SUM50020EL-GE3
MOSFET N-CH 60V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM50020EL-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power conversion. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 375W. The low on-resistance of 2.1mOhm at 30A and 10V (Vgs) minimizes conduction losses. It offers a gate charge (Qg) of 126nC at 10V and an input capacitance (Ciss) of 11113pF at 30V. Designed for surface mounting, it utilizes the TO-263-3, D2PAK package. This device is suitable for applications in automotive, industrial power supplies, and high-power DC-DC converters. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11113 pF @ 30 V |
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