SUM50020E-GE3
MOSFET N-CH 60V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM50020E-GE3 TrenchFET® N-Channel Power MOSFET. This device features a 60V drain-to-source voltage and a continuous drain current of 120A at 25°C. With a maximum power dissipation of 375W (Tc) and a low on-resistance of 2.2 mOhm at 30A and 10V, it is engineered for high-efficiency power conversion. The TO-263 (D2PAK) surface-mount package ensures robust thermal performance. Key parameters include a gate charge of 128 nC at 10V and input capacitance of 11150 pF at 30V. Operating temperature range is -55°C to 175°C. This component is suitable for applications in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11150 pF @ 30 V |
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