SUM47N10-24L-E3
MOSFET N-CH 100V 47A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM47N10-24L-E3 is a TrenchFET® N-Channel Power MOSFET designed for demanding applications. This component features a 100 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 47 A at 25°C (Tc). The low on-resistance (Rds On) of 24 mOhm at 40 A and 10 V drive voltage contributes to efficient power handling. With a maximum power dissipation of 136 W (Tc), it is suitable for high-power switching applications. The device is packaged in a TO-263-3, D2PAK surface-mount package, ideal for automated assembly. Key electrical characteristics include a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 2400 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries such as industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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