SUM40N15-38-E3
MOSFET N-CH 150V 40A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SUM40N15-38-E3. This TO-263 (D2PAK) surface-mount device offers a 150V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). Optimized for efficiency, it features a maximum Rds(on) of 38mOhm at 15A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. With a maximum power dissipation of 166W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in power supplies, automotive systems, and industrial motor control. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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