SUM40N02-12P-E3
MOSFET N-CH 20V 40A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM40N02-12P-E3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 40A at 25°C (Tc). The device boasts a low on-resistance (Rds(on)) of 12mOhm maximum at 20A and 10V (Vgs), facilitating minimal conduction losses. Gate charge (Qg) is specified at a maximum of 12 nC at 4.5V (Vgs). The MOSFET supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V maximum at 250µA. With a power dissipation capability of 83W (Tc), it is suitable for demanding thermal environments. The SUM40N02-12P-E3 is packaged in a TO-263-3, D2PAK surface-mount configuration and is supplied on tape and reel. Typical applications include power supplies, automotive electronics, and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |