SUM36N20-54P-E3
MOSFET N-CH 200V 36A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUM36N20-54P-E3 is a 200V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current capability of 36A (Tc) at 25°C and a low on-resistance of 53mOhm maximum at 20A and 15V Vgs. The SUM36N20-54P-E3 utilizes Vishay's TrenchFET® technology for enhanced performance and efficiency. It is packaged in a TO-263 (D2PAK) surface mount package, suitable for high-power density designs. Maximum power dissipation is rated at 166W (Tc) or 3.12W (Ta). Key parameters include 3100pF maximum input capacitance (Ciss) and 127nC maximum gate charge (Qg). Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly found in power supply units, motor control, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.12W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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