SUM33N20-60P-E3
MOSFET N-CH 200V 33A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM33N20-60P-E3 is a TrenchFET® series N-Channel power MOSFET designed for high-efficiency power conversion. This component offers a 200 V drain-to-source voltage (Vdss) with a continuous drain current capability of 33 A at 25°C (Tc). The SUM33N20-60P-E3 features a low on-resistance of 59 mOhm maximum at 20 A, 15 V, facilitating reduced conduction losses. With a maximum gate charge of 113 nC at 15 V and input capacitance of 2735 pF at 25 V, efficient switching performance is achieved. Power dissipation is rated at 156 W (Tc) and 3.12 W (Ta). The device is packaged in a TO-263-3, D2PAK surface mount package and operates across a temperature range of -55°C to 175°C. Its robust design makes it suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.12W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2735 pF @ 25 V |
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