SUM25P10-138-E3
MOSFET N-CH 100V 16.7A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM25P10-138-E3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 16.7A at 25°C (Tc). With a low on-resistance of 13.8mOhm at 6A and 10V Vgs, the SUM25P10-138-E3 minimizes conduction losses. The MOSFET supports gate drive voltages from 6V to 10V, with a maximum gate-source voltage of ±20V. Key electrical characteristics include a maximum gate charge of 60 nC at 10V and a maximum input capacitance (Ciss) of 2110 pF at 25V. Its surface mount TO-263-3 (D2PAK) package facilitates efficient thermal management, offering a power dissipation of 3.75W (Ta) and 88.2W (Tc). Operating across a temperature range of -55°C to 175°C (TJ), this Vishay Siliconix MOSFET is suitable for power supply, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2110 pF @ 25 V |
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