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SUM23N15-73-E3

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SUM23N15-73-E3

MOSFET N-CH 150V 23A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SUM23N15-73-E3 is a 150V N-channel power MOSFET in a TO-263 (D2PAK) surface-mount package. This device offers a continuous drain current capability of 23A at 25°C (Tc) and a low on-resistance of 73mO maximum at 15A, 10V. The MOSFET features a drain-to-source voltage (Vds) of 150V and a maximum gate-source voltage (Vgs) of ±20V. With a maximum power dissipation of 100W at 25°C (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 35nC (max) at 10V and input capacitance (Ciss) of 1290pF (max) at 25V. The SUM23N15-73-E3 is utilized across various industries including industrial power supplies, automotive electronics, and renewable energy systems. The component operates within a temperature range of -55°C to 175°C (TJ) and is supplied on tape and reel (TR).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs73mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 25 V

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