SUM18N25-165-E3
MOSFET N-CH 250V 18A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUM18N25-165-E3 is an N-Channel power MOSFET from the TrenchFET® series. This component features a 250V drain-source breakdown voltage and a continuous drain current capability of 18A at 25°C (Tc). The device offers a low on-resistance of 165mOhm maximum at 14A and 10V gate drive. With a maximum power dissipation of 150W at 25°C (Tc), it is suitable for demanding applications. Key specifications include a gate charge of 45 nC (max) at 10V and input capacitance of 1950 pF (max) at 25V. The Vishay Siliconix SUM18N25-165-E3 is housed in a TO-263 (D2PAK) surface-mount package, making it ideal for use in power supplies, motor control, and industrial automation systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
