SUM120N04-1M7L-GE3
MOSFET N-CH 40V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM120N04-1M7L-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 375W (Tc). The on-resistance (Rds On) is specified at a maximum of 17mOhm at 30A and 10V gate-source voltage. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package and supplied on tape and reel. Key parameters include a gate charge (Qg) of 285 nC (max) at 10V and input capacitance (Ciss) of 11685 pF (max) at 20V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11685 pF @ 20 V |
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