SUM110P08-11-E3
MOSFET P-CH 80V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM110P08-11-E3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power conversion applications. This component features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 110A at 25°C (Tc). With a low on-resistance (Rds On) of 11.1mOhm maximum at 20A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device is packaged in a TO-263 (D2PAK) surface-mount configuration, offering excellent thermal performance with a power dissipation of 375W (Tc). Key parameters include a gate charge (Qg) of 280 nC maximum at 10V Vgs and input capacitance (Ciss) of 11500 pF maximum at 40V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 13.6W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 40 V |
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