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SUM110N08-07P-E3

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SUM110N08-07P-E3

MOSFET N-CH 75V 110A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® MOSFET N-Channel SUM110N08-07P-E3. This N-channel power MOSFET features a 75V drain-source voltage rating and a continuous drain current capability of 110A at 25°C (Tc). The device offers a low on-resistance of 7mOhm at 20A and 10V. Designed for surface mounting in the TO-263 (D2PAK) package, it supports a maximum junction temperature of 150°C and a gate-source voltage range of ±20V. Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 4250 pF at 30V. Power dissipation is rated at 3.75W (Ta) and 208.3W (Tc). This component is suitable for applications in the automotive and industrial sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 208.3W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4250 pF @ 30 V

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