SUM110N08-07P-E3
MOSFET N-CH 75V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® MOSFET N-Channel SUM110N08-07P-E3. This N-channel power MOSFET features a 75V drain-source voltage rating and a continuous drain current capability of 110A at 25°C (Tc). The device offers a low on-resistance of 7mOhm at 20A and 10V. Designed for surface mounting in the TO-263 (D2PAK) package, it supports a maximum junction temperature of 150°C and a gate-source voltage range of ±20V. Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 4250 pF at 30V. Power dissipation is rated at 3.75W (Ta) and 208.3W (Tc). This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 208.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 30 V |
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