SUM110N06-3M9H-E3
MOSFET N-CH 60V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM110N06-3M9H-E3 is a TrenchFET® series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) rating of 110A at 25°C (Tc). The low on-resistance (Rds On) of 3.9mOhm is achieved at 30A and 10V gate-source voltage (Vgs). With a maximum gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 15800 pF at 25V, this MOSFET is well-suited for demanding switching applications. The TO-263-3, D2PAK package facilitates surface mounting with excellent thermal performance, supporting 375W of power dissipation at 25°C (Tc). Operating temperature range is from -55°C to 175°C (TJ). This component is commonly utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15800 pF @ 25 V |
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