SUM110N06-3M4L-E3
MOSFET N-CH 60V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SUM110N06-3M4L-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current capability of 110A at 25°C (Tc). The low on-resistance of 3.4mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses. Operating with a gate drive voltage range from 4.5V to 10V, it offers excellent switching performance with a maximum gate charge of 300 nC at 10V. The SUM110N06-3M4L-E3 is housed in a TO-263-3, D2PAK surface-mount package, supporting efficient thermal management with a maximum power dissipation of 375W (Tc). It is suitable for use in industries such as automotive and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12900 pF @ 25 V |
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