SUM110N05-06L-E3
MOSFET N-CH 55V 110A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM110N05-06L-E3 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 110A at 25°C (Tc). With a low on-resistance of 6 mOhm at 30A and 10V, it minimizes conduction losses. The MOSFET exhibits a typical gate charge (Qg) of 100 nC at 10V and an input capacitance (Ciss) of 3300 pF at 25V. Packaged in a TO-263-3 (D2PAK) surface-mount configuration, the SUM110N05-06L-E3 is suitable for demanding power management solutions in industries such as automotive and industrial power systems. It is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |