SUM110N04-2M1P-E3
MOSFET N-CH 40V 29A/110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM110N04-2M1P-E3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vds) and a continuous drain current (Id) of 29A at 25°C ambient temperature, escalating to 110A at 25°C case temperature. With a maximum on-resistance (Rds On) of 2.1mOhm at 30A and 10V Vgs, it offers low conduction losses. The Vishay Siliconix MOSFET utilizes a surface mount TO-263 (D2PAK) package, suitable for automated assembly. Power dissipation is rated at 3.13W (Ta) and 312W (Tc). Key electrical characteristics include a gate charge (Qg) of 360 nC at 10V Vgs and input capacitance (Ciss) of 18800 pF at 20V Vds. The device operates across a temperature range of -55°C to 150°C (TJ). This Vishay Siliconix MOSFET is commonly employed in industrial power supplies, automotive applications, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 312W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18800 pF @ 20 V |