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SUM110N04-05H-E3

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SUM110N04-05H-E3

MOSFET N-CH 40V 110A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel TrenchFET® SUM110N04-05H-E3. This device features 40V drain-to-source voltage and 110A continuous drain current at 25°C (Tc). The N-channel MOSFET offers a maximum Rds(on) of 5.3mOhm at 30A and 10V Vgs. Key parameters include a gate charge of 95 nC (max) at 10V Vgs and input capacitance of 6700 pF (max) at 25V Vds. The Vishay Siliconix SUM110N04-05H-E3 is housed in a TO-263-3, D2PAK surface mount package, with a maximum power dissipation of 150W under typical operating conditions (Tc). It is suitable for applications requiring high current handling and low on-resistance, commonly found in power management and automotive systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6700 pF @ 25 V

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