SUM110N04-03-E3
MOSFET N-CH 40V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SUM110N04-03-E3, offers a 40V drain-to-source voltage and a continuous drain current of 110A at 25°C (Tc). This surface-mount device in a TO-263 (D2PAK) package features a low on-resistance of 2.8mOhm maximum at 30A and 10V. Key electrical characteristics include a gate charge of 250 nC maximum at 10V and input capacitance of 8250 pF maximum at 25V. The device supports a maximum gate-source voltage of ±20V and a threshold voltage of 4V maximum at 250µA. Power dissipation is rated at 3.75W (Ta) and 375W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly employed in power supply, automotive, and industrial applications. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V |