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SUM110N03-04P-E3

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SUM110N03-04P-E3

MOSFET N-CH 30V 110A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SUM110N03-04P-E3 is a 30V N-channel TrenchFET® power MOSFET designed for demanding applications. This device offers a continuous drain current capability of 110A at 25°C (Tc) and a low on-resistance of 4.2mOhm maximum at 20A and 10V Vgs. With a gate charge (Qg) of 60nC at 4.5V and input capacitance (Ciss) of 5100pF at 25V, it is optimized for efficient switching. The MOSFET features a maximum power dissipation of 3.75W (Ta) and 120W (Tc) and operates across a wide temperature range of -55°C to 175°C. The TO-263-3, D2PAK package facilitates surface mounting. This component finds application in power supplies, automotive systems, and industrial equipment requiring high current handling and low conduction losses.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V

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