SUM110N03-04P-E3
MOSFET N-CH 30V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUM110N03-04P-E3 is a 30V N-channel TrenchFET® power MOSFET designed for demanding applications. This device offers a continuous drain current capability of 110A at 25°C (Tc) and a low on-resistance of 4.2mOhm maximum at 20A and 10V Vgs. With a gate charge (Qg) of 60nC at 4.5V and input capacitance (Ciss) of 5100pF at 25V, it is optimized for efficient switching. The MOSFET features a maximum power dissipation of 3.75W (Ta) and 120W (Tc) and operates across a wide temperature range of -55°C to 175°C. The TO-263-3, D2PAK package facilitates surface mounting. This component finds application in power supplies, automotive systems, and industrial equipment requiring high current handling and low conduction losses.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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