SUM110N03-03P-E3
MOSFET N-CH 30V 110A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUM110N03-03P-E3 is an N-Channel Power MOSFET with a 30V drain-to-source voltage. It features a low on-resistance of 2.6mOhm at 30A and 10V Vgs, optimized for efficient power conversion. The component is rated for a continuous drain current of 110A at 25°C (Tc) and boasts a maximum power dissipation of 375W (Tc). Its TO-263 (D2PAK) surface mount package is suitable for demanding applications. Key parameters include a gate charge of 250 nC at 10V and input capacitance of 12100 pF at 25V. This device is typically employed in industrial power supplies, automotive electronics, and high-performance computing systems. Packaging is provided on tape and reel (TR) for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF @ 25 V |