SUM10250E-GE3
MOSFET N-CH 250V 63.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM10250E-GE3 is an N-Channel ThunderFET® MOSFET designed for high-power switching applications. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 63.5A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 31mOhm is achieved at 30A and 10V gate drive. Key parameters include a 10V gate-source voltage (Vgs) specification for Rds On, a gate charge (Qg) of 88nC at 10V, and an input capacitance (Ciss) of 3002pF at 125V. The component is housed in a TO-263-3, D2PAK surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3002 pF @ 125 V |
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