SUM09N20-270-E3
MOSFET N-CH 200V 9A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUM09N20-270-E3 TrenchFET® N-Channel Power MOSFET. This device features a 200V Drain-Source Voltage (Vdss) and a continuous drain current of 9A at 25°C (Tc). With a maximum Rds(on) of 270mOhm at 5A and 10V Vgs, it offers efficient switching characteristics. The SUM09N20-270-E3 is housed in a TO-263 (D2PAK) surface mount package, suitable for demanding applications. Key parameters include a gate charge (Qg) of 17 nC (max) at 10V and input capacitance (Ciss) of 580 pF (max) at 25V. Power dissipation is rated at 60W (Tc) and 3.75W (Ta). Operating temperature range is -55°C to 175°C. This component is utilized in power supply and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
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