SUG90090E-GE3
MOSFET N-CH 200V 100A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUG90090E-GE3 is a ThunderFET® N-Channel power MOSFET designed for high-performance applications. Featuring a Drain-Source Voltage (Vdss) of 200V and a Continuous Drain Current (Id) of 100A (Tc), this component offers robust power handling capabilities. Its low On-Resistance (Rds On) of 9.5mOhm at 20A and 10V gate drive ensures efficient operation. The device boasts a maximum power dissipation of 395W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), making it suitable for demanding environments. Key electrical characteristics include a Gate Charge (Qg) of 129 nC at 10V and an Input Capacitance (Ciss) of 5220 pF at 100V. Packaged in a TO-247AC (TO-247-3) through-hole configuration, this MOSFET is utilized in industries such as industrial power supplies, automotive systems, and renewable energy.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 395W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5220 pF @ 100 V |
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