SUG80050E-GE3
MOSFET N-CH 150V 100A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUG80050E-GE3 is an N-Channel Power MOSFET designed for demanding applications. Featuring a 150 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100 A at 25°C, this component offers a maximum power dissipation of 500 W (Tc). The low on-resistance of 5.4 mOhm at 20 A and 10 V (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 165 nC at 10 V and input capacitance (Ciss) of 6250 pF at 75 V. The SUG80050E-GE3 is housed in a TO-247AC package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This device is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 75 V |
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