SUD90330E-GE3
MOSFET N-CH 200V 35.8A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® SUD90330E-GE3 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 200V Vdss rating and a continuous drain current capability of 35.8A (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance is specified at 37.5mOhm maximum at 12.2A and 10V Vgs. Key parameters include a gate charge of 32 nC (max) at 10V and an input capacitance of 1172 pF (max) at 100V. Operating across a wide temperature range of -55°C to 175°C (TJ), the SUD90330E-GE3 is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. This component finds application in industrial power supplies, automotive systems, and consumer electronics requiring robust power management.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 37.5mOhm @ 12.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 100 V |
Request a Quote
Clients Also Buy
SIR622DP-T1-RE3
MOSFET N-CH 150V 12.6A PPAK
SIR690DP-T1-GE3
MOSFET N-CH 200V 34.4A PPAK SO-8
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70
