SUD90330E-BE3
MOSFET N-CH 200V 35.8A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUD90330E-BE3 is an N-Channel Power MOSFET featuring a 200V drain-source breakdown voltage. This surface-mount device, packaged in a TO-252AA (DPAK) configuration, offers a continuous drain current (Id) of 35.8A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 37.5mOhm at 12.2A and 10V Vgs, and a gate charge (Qg) of 32 nC at 10V. The device operates over a wide temperature range from -55°C to 175°C (TJ). This component is commonly utilized in power supply designs, automotive applications, and industrial motor control systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 37.5mOhm @ 12.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 100 V |
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