SUD80460E-GE3
MOSFET N-CH 150V 42A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® N-Channel Power MOSFET, SUD80460E-GE3, offers a 150V drain-source voltage and a continuous drain current of 42A at 25°C. This surface mount component, housed in a TO-252AA package, features a maximum power dissipation of 65.2W (Tc) and a low on-resistance of 44.7mOhm at 8.3A and 10V gate drive. Key parameters include a typical gate charge of 16nC and input capacitance of 560pF. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 44.7mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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