Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

SUD80460E-BE3

Banner
productimage

SUD80460E-BE3

MOSFET N-CH 150V 42A TO252AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix ThunderFET® SUD80460E-BE3 is a N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 42 A at 25°C (Tc), with a maximum power dissipation of 65.2 W (Tc). The on-resistance (Rds On) is specified at a maximum of 44.7 mOhm at 8.3 A and 10 V gate-source voltage. Key characteristics include a gate charge (Qg) of 16 nC at 10 V and input capacitance (Ciss) of 560 pF at 50 V. The device operates across a wide temperature range of -55°C to 175°C (TJ). The SUD80460E-BE3 is housed in a TO-252AA surface mount package. This MOSFET is suitable for use in power supply, automotive, and industrial applications where efficient power switching is critical.

Additional Information

Series: ThunderFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Rds On (Max) @ Id, Vgs44.7mOhm @ 8.3A, 10V
FET Feature-
Power Dissipation (Max)65.2W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 50 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SIR622DP-T1-RE3

MOSFET N-CH 150V 12.6A PPAK

product image
SIR690DP-T1-GE3

MOSFET N-CH 200V 34.4A PPAK SO-8

product image
SIA446DJ-T1-GE3

MOSFET N-CH 150V 7.7A PPAK SC70