SUD70090E-GE3
MOSFET N-CH 100V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® N-Channel MOSFET, part number SUD70090E-GE3, offers 100V drain-source breakdown voltage and 50A continuous drain current capability at 25°C. This device features a low on-resistance of 8.9mOhm maximum at 20A and 10V Vgs, with a power dissipation of 125W at the same case temperature. The TO-252AA surface mount package facilitates integration into compact designs. Key parameters include 1950pF maximum input capacitance and 50nC maximum gate charge. This MOSFET is suitable for applications in automotive and industrial power management systems requiring efficient switching and high current handling.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 50 V |
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