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SUD50P10-43-E3

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SUD50P10-43-E3

MOSFET P-CH 100V 38A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50P10-43-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding power management applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current capability of 38A at 25°C (Tc). The Vishay Siliconix SUD50P10-43-E3 offers a maximum on-resistance of 43mOhm at 9.4A and 10V drive voltage, ensuring efficient power transfer. With a maximum power dissipation of 136W (Tc), it is suitable for high-power switching and load management. The TO-252AA package facilitates surface mounting, and the component operates across a wide temperature range of -50°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 5230 pF at 50V. This MOSFET is utilized in industries such as industrial automation and consumer electronics.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs43mOhm @ 9.4A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5230 pF @ 50 V

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