SUD50P08-26-E3
MOSFET P-CH 80V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® series SUD50P08-26-E3 is a P-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 50A at 25°C (Tc) and a drain-source voltage (Vdss) of 80V. The ultra-low on-resistance (Rds On) of 26mOhm is achieved at 12.9A and 10V Vgs, minimizing conduction losses. With a maximum power dissipation of 136W (Tc), it supports demanding thermal environments. Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 5160 pF at 40V. The TO-252AA package with surface mount capability is suitable for automated assembly. Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in industries such as automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 12.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5160 pF @ 40 V |
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