SUD50P08-25L-BE3
MOSFET P-CH 80V 12.5A/50A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50P08-25L-BE3 is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 80V and a continuous drain current capability of 12.5A at ambient temperature (Ta) and 50A at case temperature (Tc). With a low Rds(On) of 25.2mOhm at 12.5A and 10V Vgs, it offers efficient power handling, with a maximum power dissipation of 8.3W (Ta) and 136W (Tc). The gate drive voltage range is specified from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 160 nC and input capacitance (Ciss) of 4700 pF. The TO-252AA (DPAK) surface mount package ensures compact integration. This MOSFET is suitable for applications in industrial power supplies, automotive systems, and power management. It operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25.2mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 40 V |
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