SUD50P04-40P-T4-E3
MOSFET P-CH 40V 6A/8A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SUD50P04-40P-T4-E3, offers a 40V drain-to-source breakdown voltage. This surface-mount device in a TO-252AA package features a maximum Rds(on) of 40mOhm at 5A and 10V Vgs. Continuous drain current is rated at 6A (Ta) and 8A (Tc), with power dissipation capabilities of 2.4W (Ta) and 24W (Tc). Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 1555 pF at 20V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 24W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1555 pF @ 20 V |
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