SUD50P04-23-GE3
MOSFET P-CH 40V 8.2A/20A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50P04-23-GE3 is a P-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-to-Source Voltage (Vdss) and offers a continuous drain current capability of 8.2A at ambient temperature and 20A at case temperature. With a low Rds(on) of 23mOhm at 15A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±16V. Key parameters include a maximum gate charge (Qg) of 65 nC at 10V and a maximum input capacitance (Ciss) of 1880 pF at 20V. The SUD50P04-23-GE3 is packaged in a TO-252AA (DPAK) surface-mount package, suitable for efficient thermal management with a power dissipation of 3.1W (Ta) and 45.4W (Tc). Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in power management systems and automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 45.4W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 20 V |