SUD50P04-23-E3
MOSFET P-CH 40V 8.2A/20A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SUD50P04-23-E3, offers 40V drain-to-source voltage and a continuous drain current of 8.2A at 25°C ambient and 20A at 25°C case temperature. This surface mount device, housed in a TO-252AA package, features a maximum Rds(on) of 23mOhm at 15A and 10V Vgs. With a gate charge (Qg) of 65nC at 10V and input capacitance (Ciss) of 1880pF at 20V, it is suitable for applications requiring efficient power switching. Its robust construction supports a maximum junction temperature of 175°C and a power dissipation of 3.1W (Ta) or 45.4W (Tc). This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 45.4W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 20 V |