SUD50P04-15-E3
MOSFET P-CH 40V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUD50P04-15-E3 is a P-Channel MOSFET from the TrenchFET® series. This component features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous Drain current (Id) of 50 A at 25°C (Tc). With a maximum Rds On of 15 mOhm at 30 A and 10 V, it offers low conduction losses. The device is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 130 nC (Max) at 10 V and input capacitance (Ciss) of 5400 pF (Max) at 25 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power switching and load management within the industrial and automotive sectors. Power dissipation is rated at 3 W (Ta) and 100 W (Tc).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |