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SUD50P04-13L-GE3

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SUD50P04-13L-GE3

MOSFET P-CH 40V 60A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50P04-13L-GE3 is a P-Channel TrenchFET® power MOSFET with a drain-source voltage (Vdss) of 40V. This device offers a continuous drain current (Id) of 60A at 25°C (Tc) and a maximum on-resistance (Rds On) of 13mOhm at 30A and 10V Vgs. It features a gate charge (Qg) of 95 nC maximum at 10V Vgs and input capacitance (Ciss) of 3120 pF maximum at 25V Vds. The MOSFET supports gate-source voltage (Vgs) up to ±20V and has a threshold voltage (Vgs(th)) of 3V maximum at 250µA. With a maximum power dissipation of 3W (Ta) and 93.7W (Tc), it is supplied in a TO-252AA surface mount package format, typically supplied on tape and reel. This component is suitable for applications in power management and automotive systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 93.7W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V

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