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SUD50P04-13L-E3

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SUD50P04-13L-E3

MOSFET P-CH 40V 60A TO252

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUD50P04-13L-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a drain-source breakdown voltage (Vdss) of 40V and a continuous drain current (Id) of 60A at 25°C (Tc). The low on-resistance (Rds On) of 13mOhm is achieved at 30A and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA, it offers flexibility in drive circuitry. The component boasts a maximum power dissipation of 3W (Ta) and 93.7W (Tc). Key electrical parameters include a gate charge (Qg) of 95 nC (max) at 10V and an input capacitance (Ciss) of 3120 pF (max) at 25V. Mounted in a TO-252AA (DPAK) surface-mount package, this MOSFET is suitable for applications in automotive, industrial power, and energy systems. It operates across a temperature range of -55°C to 175°C (TJ) and is supplied on tape and reel (TR).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 93.7W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V

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