SUD50P04-13L-E3
MOSFET P-CH 40V 60A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50P04-13L-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a drain-source breakdown voltage (Vdss) of 40V and a continuous drain current (Id) of 60A at 25°C (Tc). The low on-resistance (Rds On) of 13mOhm is achieved at 30A and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA, it offers flexibility in drive circuitry. The component boasts a maximum power dissipation of 3W (Ta) and 93.7W (Tc). Key electrical parameters include a gate charge (Qg) of 95 nC (max) at 10V and an input capacitance (Ciss) of 3120 pF (max) at 25V. Mounted in a TO-252AA (DPAK) surface-mount package, this MOSFET is suitable for applications in automotive, industrial power, and energy systems. It operates across a temperature range of -55°C to 175°C (TJ) and is supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 93.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |