SUD50P04-09L-E3
MOSFET P-CH 40V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUD50P04-09L-E3 is a P-Channel TrenchFET® Power MOSFET with a 40V drain-source voltage. This device offers a continuous drain current of 50A at 25°C (Tc) and a maximum on-resistance of 9.4mOhm at 24A and 10V Vgs. It features low gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 4800 pF at 25V. The MOSFET is available in a TO-252AA package for surface mounting and operates across a temperature range of -55°C to 175°C. Power dissipation is rated at 3W (Ta) and 136W (Tc). The drive voltage range is specified from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a threshold voltage of 3V at 250µA. This component is commonly utilized in power management applications across various industries, including automotive and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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