SUD50N10-34P-T4-E3
MOSFET N-CH 100V 5.9A/20A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50N10-34P-T4-E3 is an N-Channel power MOSFET from the TrenchFET® series. This device features a 100 V drain-source breakdown voltage and a continuous drain current capability of 5.9 A at 25°C ambient temperature, or 20 A at 25°C case temperature. With a maximum on-resistance of 34 mO at 7 A drain current and 10 V gate-source voltage, it offers low conduction losses. The device supports gate drive voltages up to ±20 V. Key parameters include a 30 nC maximum gate charge and 1800 pF maximum input capacitance. It is packaged in a TO-252AA surface-mount package, designed for efficient thermal management with a maximum continuous power dissipation of 2.5 W (ambient) and 56 W (case). This MOSFET is suitable for applications in consumer electronics and industrial power solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |