SUD50N10-18P-GE3
MOSFET N-CH 100V 8.2A/50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUD50N10-18P-GE3 is a TrenchFET® series N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 8.2A at 25°C ambient and 50A continuous drain current at 25°C case temperature. With a maximum power dissipation of 3W (ambient) and 136.4W (case), it is suitable for high-power density designs. The RDS(on) is specified at a maximum of 18.5mOhm at 15A and 10V gate drive. Key parameters include a typical gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 2600 pF at 50V. The device is housed in a TO-252AA package for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET finds application in power management, automotive, and industrial sectors where efficient power switching is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136.4W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 50 V |
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