SUD50N10-18P-E3
MOSFET N-CH 100V 8.2A/50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUD50N10-18P-E3 is a 100V N-channel power MOSFET designed for efficient power management. This component features a low on-resistance of 18.5mOhm maximum at 15A and 10V Vgs, facilitating minimal conduction losses. It offers a continuous drain current capability of 8.2A at ambient temperature (Ta) and 50A at case temperature (Tc), with a maximum power dissipation of 3W (Ta) and 136.4W (Tc). The SUD50N10-18P-E3 utilizes a TO-252AA (DPAK) surface-mount package for streamlined assembly. Key electrical characteristics include a gate charge (Qg) of 75nC maximum at 10V Vgs and input capacitance (Ciss) of 2600pF maximum at 50V Vds. This MOSFET is suitable for applications in telecommunications, industrial power supplies, and automotive electronics. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136.4W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 50 V |