SUD50N06-09L-E3
MOSFET N-CH 60V 50A TO252Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUD50N06-09L-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). Its low on-resistance is specified as 9.3mOhm maximum at 20A and 10V gate-source voltage. The device is designed for surface mount applications within a TO-252-3, DPAK package. With a maximum power dissipation of 3W (Ta) and 136W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 70nC (max) at 10V and input capacitance (Ciss) of 2650pF (max) at 25V. The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in power management, automotive, and industrial power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
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